对地抽头进行尺寸调整以减少射频LNAs中的衬底噪声耦合

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.320926

A. Sundaresan, T. Fiez, K. Mayaram

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引用次数: 1

摘要

定量研究了一种重掺杂CMOS工艺中，地抽头尺寸对阶梯形缓冲器注入1.5GHz低噪声放大器(LNA)噪声的影响。精确的建模提供了测量和模拟之间的良好一致性。通过将衬底触点的面积按400倍缩放，并通过增加触点与敏感晶体管的接近度，实现了10dB隔离度的增加

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Sizing Ground Taps to Minimize Substrate Noise Coupling in RF LNAs

The influence of the sizing of ground taps on the noise injected into a 1.5GHz low noise amplifier (LNA), by a stepped buffer, for a heavily doped CMOS process is quantitatively examined. Precise modeling provides good agreement between measurements and simulations. A 10dB increase in isolation was achieved by scaling the area of the substrate contact by a factor of 400, and by increasing the proximity of the contacts to the sensitive transistors

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IEEE Custom Integrated Circuits Conference 2006

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