溅射ZnO/IGZO异质结构忆阻器的电阻开关

Xiongfeng Wang, W. Liao, T. Rao, Yuanliang Zhou, Yuankang Chen, Yudong Pang, Xiaopei Chen, Guocheng Bao
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引用次数: 0

摘要

忆阻器具有可逆的电阻开关特性,在非易失性存储器中具有很大的应用潜力。在这项工作中,我们提出了一种基于ZnO/IGZO异质结构的忆阻器,它在不同的顺应电流下表现出典型的双极电阻开关行为,HRS/LRS比高达108,适合于非易失性存储器。空间电荷限制传导(SCLC)机制适合于理解电流传导,而氧空位在两个介电层之间的扩散导致电阻开关行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Resistive Switching in Sputtered ZnO/IGZO Heterostructure Memristor
Owing to the reversible resistive switching behavior, memristor possesses great potential in non-volatile memory application. In this work, we proposed a ZnO/IGZO heterostructure based memristor, which shows a typical bipolar resistive switching behavior under different compliance current and a high HRS/LRS ratio of 108, rendering it suitable for nonvolatile memory. Space-Charge-Limited Conduction (SCLC) mechanism is found suitable for understanding the current conduction while the diffusion of oxygen vacancies between the two dielectric layers leads to the resistive switching behavior.
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