具有片上匹配网络和集成体声波谐振器的低噪声放大器，具有高图像抑制能力

2009 Ph.D. Research in Microelectronics and Electronics Pub Date : 2009-07-12 DOI:10.1109/RME.2009.5201313

M. Dielacher, Martin Flatscher, W. Pribyl

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引用次数: 6

摘要

本文提出了一种基于0.13µm CMOS工艺的2.45 GHz低噪声放大器(LNA)。它具有片上匹配网络，并包含用于射频窄带滤波的集成体声波(BAW)谐振器。LNA和匹配网络的电压增益为31.5 dB，噪声系数(NF)为4.7 dB，电流消耗为2ma。

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A low noise amplifier with on-chip matching network and integrated bulk Acoustic Wave resonators for high image rejection

This paper presents a 2.45 GHz low noise amplifier (LNA), built in a 0.13 µm CMOS process. It has an on-chip matching network and contains integrated bulk acoustic wave (BAW) resonators for narrow-band filtering at RF. The voltage gain of LNA and matching network is 31.5 dB with 4.7 dB noise figure (NF) at a current consumption of 2 mA.

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2009 Ph.D. Research in Microelectronics and Electronics

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