T. Yamada, H. Yamaguchi, Y. Kudo, K. Okano, H. Kato, S. Shikata, C. Nebel
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Field emission from surface-reconstructed phosphorus-doped homoepitaxial diamond (111)
We report for the first time about field emission from carbon-reconstructed phosphorus-doped homoepitaxial diamond surfaces. In order to achieve surface reconstruction, annealing at 950degC for 60 min in a high vacuum system has been applied. Field emission shows the lowest threshold field for the carbon reconstructed surface of 16 V/mum, while the threshold fields for oxidized and hydrogen-terminated surface are 28 V/mum and 44 V/mum, respectively. A model is introduced to discuss these results, which takes into account effective electron affinities and tunneling of electrons from the conduction band minimum and from the donor level
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