关于半导体热电器件ZT = 1值可能的物理意义的评述

M. Vedernikov, Y. Ravich
{"title":"关于半导体热电器件ZT = 1值可能的物理意义的评述","authors":"M. Vedernikov, Y. Ravich","doi":"10.1109/ICT.1996.553291","DOIUrl":null,"url":null,"abstract":"The problem of the existence of an upper limit of thermoelectric figure of merit Z is of principal importance for thermoelectric energy conversion. It was discussed actively during the period of development of basic aspects of semiconductor thermoelectricity but was not solved. After a long time of silence it attracts attention again. C.B.Vining at ICT'92 considered the well known fact that the dimensionless parameter ZT/spl les/1 for all real thermoelectrics. He concluded that one doesn't know any physical reasons to consider this value as a specific one. Our paper indicates those rather general assumptions at which ZT/spl ap/1 for semiconductors at a qualitative evaluation. It is shown too that the dependence of ZT increase on decrease of lattice thermal conductivity is weaker for semiconductors with ZT>1 than for one with ZT<1.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Remarks on a possible physical sense of the value ZT = 1 for semiconductor thermoelectrics\",\"authors\":\"M. Vedernikov, Y. Ravich\",\"doi\":\"10.1109/ICT.1996.553291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The problem of the existence of an upper limit of thermoelectric figure of merit Z is of principal importance for thermoelectric energy conversion. It was discussed actively during the period of development of basic aspects of semiconductor thermoelectricity but was not solved. After a long time of silence it attracts attention again. C.B.Vining at ICT'92 considered the well known fact that the dimensionless parameter ZT/spl les/1 for all real thermoelectrics. He concluded that one doesn't know any physical reasons to consider this value as a specific one. Our paper indicates those rather general assumptions at which ZT/spl ap/1 for semiconductors at a qualitative evaluation. It is shown too that the dependence of ZT increase on decrease of lattice thermal conductivity is weaker for semiconductors with ZT>1 than for one with ZT<1.\",\"PeriodicalId\":447328,\"journal\":{\"name\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1996.553291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1996.553291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在热电能量转换中,热电系数Z的上限是否存在是一个重要的问题。在半导体热电学基础方面的发展过程中,人们对这一问题进行了积极的讨论,但一直没有得到解决。在长时间的沉默之后,它再次引起了人们的注意。C.B.Vining在ICT'92考虑了众所周知的事实,即所有实际热电器件的无量纲参数ZT/spl小于/1。他的结论是,人们不知道任何物理上的理由来认为这个值是一个特定的值。我们的论文指出了那些相当一般的假设,在这些假设下,半导体的ZT/spl在定性评价时为/1。结果还表明,对于ZT>1的半导体,ZT的增加对晶格热导率降低的依赖性弱于ZT<1的半导体。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Remarks on a possible physical sense of the value ZT = 1 for semiconductor thermoelectrics
The problem of the existence of an upper limit of thermoelectric figure of merit Z is of principal importance for thermoelectric energy conversion. It was discussed actively during the period of development of basic aspects of semiconductor thermoelectricity but was not solved. After a long time of silence it attracts attention again. C.B.Vining at ICT'92 considered the well known fact that the dimensionless parameter ZT/spl les/1 for all real thermoelectrics. He concluded that one doesn't know any physical reasons to consider this value as a specific one. Our paper indicates those rather general assumptions at which ZT/spl ap/1 for semiconductors at a qualitative evaluation. It is shown too that the dependence of ZT increase on decrease of lattice thermal conductivity is weaker for semiconductors with ZT>1 than for one with ZT<1.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信