0.15 μm GaN的39 GHz功率放大器

2020 4th Australian Microwave Symposium (AMS) Pub Date : 2020-02-01 DOI:10.1109/AMS48904.2020.9059531

V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich

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引用次数: 0

摘要

本文介绍了一种采用WIN半导体最新推出的0.15 μm GaN HEMT工艺实现的39ghz功率放大器。还显示了4×100栅极宽度晶体管在39 GHz功率下的负载-拉力模拟。电磁仿真结果表明，该两级放大器在39 GHz时的功率增益为17 dB, PAE为21%，饱和输出功率为31 dBm。

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A 39 GHz Power Amplifier in 0.15 μm GaN

In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

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2020 4th Australian Microwave Symposium (AMS)

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