聚苯胺基肖特基二极管的制备与表征

A. Hajibadali, M. B. Nejhad, G. Farzi, H. H. Rad
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引用次数: 4

摘要

在这项工作中,化学合成了聚苯胺。以聚苯胺为p型半导体,金为欧姆触点,铝为肖特基触点制备肖特基二极管。金属涂层采用物理气相沉积法,聚合物涂层采用溶剂铸造法。测量了二极管的电流-电压特性,研究了二极管的电流输运机理。I-V特性表明,纯聚苯胺基肖特基二极管遵循热离子发射机制。测定了肖特基二极管的理想因数、势垒高度和反向饱和电流等电子参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and characterization of polyaniline based Schottky diode
In this work polyaniline was chemically synthesized. Schottky diode was fabricated based on polyaniline as p-type semiconductor, gold as Ohmic contact and aluminum as Schottky contact. Coating of metals was carried out with physically vapour deposition method and coating of polymer was done with solvent casting method. Current-voltage (I-V) characteristics of diode were measured and current transport mechanism of diode was studied. I-V characteristics showed that Schottky diode based on pure polyaniline follows the thermionic emission mechanism. The electronic parameters of Schottky diode such as ideality factor, barrier height and reverse saturation current have been determined.
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