Analytical analysis and modelling of variation in gate capacitance of subthreshold MOSFET

In this research, analytical analysis and modelling of statistical variations in gate capacitance of subthreshold MOSFET, has been proposed with major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account. The resulting model has been found to be analytical expressions in terms of physical level variables of MOSFET. Furthermore, it has been verified by using 65 nm level BSIM4 based benchmarks and have been found to be very accurate with smaller than 10% average percentages of errors. Hence, this research gives an alternative approach to the statistical and variability aware analysis and design of subthreshold MOSFET based RF circuits, systems and applications.