{"title":"局部寿命控制的未来趋势[功率半导体器件]","authors":"J. Vobecký, P. Hazdra","doi":"10.1109/ISPSD.1996.509471","DOIUrl":null,"url":null,"abstract":"Energy and dose mixing concept, applied in ion irradiation technology for local lifetime tailoring, is shown to be capable of creating a customer-specific lifetime profile. The electrical parameters of power diode, subjected to the new ion irradiation concept, are compared with those ones resulting from the energy dispersed alpha particle irradiation.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Future trends in local lifetime control [power semiconductor devices]\",\"authors\":\"J. Vobecký, P. Hazdra\",\"doi\":\"10.1109/ISPSD.1996.509471\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Energy and dose mixing concept, applied in ion irradiation technology for local lifetime tailoring, is shown to be capable of creating a customer-specific lifetime profile. The electrical parameters of power diode, subjected to the new ion irradiation concept, are compared with those ones resulting from the energy dispersed alpha particle irradiation.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509471\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Future trends in local lifetime control [power semiconductor devices]
Energy and dose mixing concept, applied in ion irradiation technology for local lifetime tailoring, is shown to be capable of creating a customer-specific lifetime profile. The electrical parameters of power diode, subjected to the new ion irradiation concept, are compared with those ones resulting from the energy dispersed alpha particle irradiation.