具有InGaN/GaN多量子阱结构的绿色发光二极管:时间分辨光致发光、发射动力学及相关研究

Z. Feng, Xiaodong Jiang, Yueh-Chien Lee, H. Kuo, L. Wan
{"title":"具有InGaN/GaN多量子阱结构的绿色发光二极管:时间分辨光致发光、发射动力学及相关研究","authors":"Z. Feng, Xiaodong Jiang, Yueh-Chien Lee, H. Kuo, L. Wan","doi":"10.1109/ISNE.2016.7543386","DOIUrl":null,"url":null,"abstract":"To explore the mechanism, breakthrough the current bottleneck and overcome the efficiency droop from green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The photoluminescence properties and carrier dynamics of green InGaN/GaN MQW LEDs are investigated by temperature-dependent photoluminescence (PL) from 10 K to 300 K and time-resolved PL (TRPL) measurements at 10 K in our new-built lab. With increasing temperature, a blue shift of PL behavior is attributed to band-tail states formed in local potential minima resembling In-rich clusters. The energy-dependent TRPL experiments are measured at 10 K to study the carrier dynamics in the MQWs. The results show that the PL slow decays for the low-energy side are much slower than the high-energy side. The depth of carrier localization is obtained by fitting the reduced slow decay time with the emission energy increasing. All the results indicate that the PL peak is related to localized radiative recombination.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Green light-emitting diodes with InGaN/GaN multiple quantum well structures: Time-resolved photoluminescence, emission dynamics and related studies\",\"authors\":\"Z. Feng, Xiaodong Jiang, Yueh-Chien Lee, H. Kuo, L. Wan\",\"doi\":\"10.1109/ISNE.2016.7543386\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To explore the mechanism, breakthrough the current bottleneck and overcome the efficiency droop from green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The photoluminescence properties and carrier dynamics of green InGaN/GaN MQW LEDs are investigated by temperature-dependent photoluminescence (PL) from 10 K to 300 K and time-resolved PL (TRPL) measurements at 10 K in our new-built lab. With increasing temperature, a blue shift of PL behavior is attributed to band-tail states formed in local potential minima resembling In-rich clusters. The energy-dependent TRPL experiments are measured at 10 K to study the carrier dynamics in the MQWs. The results show that the PL slow decays for the low-energy side are much slower than the high-energy side. The depth of carrier localization is obtained by fitting the reduced slow decay time with the emission energy increasing. All the results indicate that the PL peak is related to localized radiative recombination.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543386\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

探索机理,突破当前瓶颈,克服绿色InGaN/GaN多量子阱(MQWs)发光二极管(led)的效率下降。在我们新建的实验室中,通过10 ~ 300 K的温度依赖光致发光(PL)和10 K的时间分辨光致发光(TRPL)测量,研究了绿色InGaN/GaN MQW led的光致发光特性和载流子动力学。随着温度的升高,PL行为的蓝移归因于与富in簇相似的局部势极小值形成的带尾态。在10 K下进行了能量依赖TRPL实验,研究了mqw中的载流子动力学。结果表明,低能侧的PL慢衰减比高能侧慢得多。通过拟合随发射能量增加而减小的慢衰减时间,得到载流子局部化深度。结果表明,PL峰与局域辐射复合有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Green light-emitting diodes with InGaN/GaN multiple quantum well structures: Time-resolved photoluminescence, emission dynamics and related studies
To explore the mechanism, breakthrough the current bottleneck and overcome the efficiency droop from green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The photoluminescence properties and carrier dynamics of green InGaN/GaN MQW LEDs are investigated by temperature-dependent photoluminescence (PL) from 10 K to 300 K and time-resolved PL (TRPL) measurements at 10 K in our new-built lab. With increasing temperature, a blue shift of PL behavior is attributed to band-tail states formed in local potential minima resembling In-rich clusters. The energy-dependent TRPL experiments are measured at 10 K to study the carrier dynamics in the MQWs. The results show that the PL slow decays for the low-energy side are much slower than the high-energy side. The depth of carrier localization is obtained by fitting the reduced slow decay time with the emission energy increasing. All the results indicate that the PL peak is related to localized radiative recombination.
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