栅极漏电流存在下的超截止CMOS技术研究

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1109/ICM.2004.1434196

N. M. Madani, B. Tavassoli, A. Behnam, A. Afzali-Kusha

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引用次数: 5

摘要

研究了超截止技术作为一种众所周知的降低泄漏功率的技术，在100nm以下的技术节点上的工作特性。特别考虑了栅极漏电对功耗的影响，提出了优化电路的设计方案。正确的设计方法可以有效地提高功率和电路性能。

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Study of super cut-off CMOS technique in presence of the gate leakage current

Super cut-off method as a well-known technique to reduce leakage power is investigated for its operational characteristics in the sub 100 nm technology nodes. Specially, the effect of the gate leakage in power consumption is considered and a design routine for optimizing the circuit in this regard is proposed. A right design methodology can improve the power and the circuit performance efficiently.

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Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

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