A Simplified Model of Tantalum Oxide Based Memristor and Application in Memory Crossbars

In this article an enhanced and simplified alteration of a memristor model based on tantalum oxide is proposed. Its application in hybrid memory crossbars is presented. The suggested model is founded on the classical Hewlett Packard Ta2O5 memristor model including several main refinements – incorporation of a simple window function, enhancement of its efficiency applying rationalized expression for the current-voltage relation and by substitution of the Heaviside function with continuous and smooth logistic function. The memristor model’s parameters are obtained by collation to tentative current-voltage characteristics and applying procedure for parameters estimation. A LTSpice library model is generated in agreement to the considered memristor model. The modified model of tantalum oxide memristor is tested in a hybrid memory crossbar. After comparison to several basic models the major advantages of the suggested memristor model are demonstrated – better performance, higher speed of operation, improved adjustment process and a sound switching representation.