电子束诱导Ge0.2Se0.8硫系玻璃直写肋波导弯曲损耗特性研究

G. Hoffman, R. Reano
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引用次数: 0

摘要

采用电子束直接写入的方法制备了Ge0.2Se0.8薄膜的肋波导。数值分析表明,在弯曲半径一定的情况下,弯曲损耗随电子束辐照次数的增加而减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bend loss characterization of direct write rib waveguides induced in Ge0.2Se0.8 chalcogenide glass using electron beams
Rib waveguides in Ge0.2Se0.8 films are fabricated by the direct write of electron beams. Numerical analysis shows that bend loss decreases with electron beam exposure count for constant bend radius.
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