{"title":"电子束诱导Ge0.2Se0.8硫系玻璃直写肋波导弯曲损耗特性研究","authors":"G. Hoffman, R. Reano","doi":"10.1109/LEOS.2009.5343258","DOIUrl":null,"url":null,"abstract":"Rib waveguides in Ge0.2Se0.8 films are fabricated by the direct write of electron beams. Numerical analysis shows that bend loss decreases with electron beam exposure count for constant bend radius.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bend loss characterization of direct write rib waveguides induced in Ge0.2Se0.8 chalcogenide glass using electron beams\",\"authors\":\"G. Hoffman, R. Reano\",\"doi\":\"10.1109/LEOS.2009.5343258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Rib waveguides in Ge0.2Se0.8 films are fabricated by the direct write of electron beams. Numerical analysis shows that bend loss decreases with electron beam exposure count for constant bend radius.\",\"PeriodicalId\":269220,\"journal\":{\"name\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2009.5343258\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bend loss characterization of direct write rib waveguides induced in Ge0.2Se0.8 chalcogenide glass using electron beams
Rib waveguides in Ge0.2Se0.8 films are fabricated by the direct write of electron beams. Numerical analysis shows that bend loss decreases with electron beam exposure count for constant bend radius.
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