用于雷达和移动通信系统的GaAs放大器

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI:10.1109/INMMC.1994.512513

K. Schopf, E. Pettenpaul

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引用次数: 1

摘要

用于x波段及以上频段的GaAs mmic已经在平面DIOM工艺中设计和制造，不仅具有可与高成本工艺相媲美的性能数据，而且具有出色的均匀性和可重复性。对于接收和发射电路，电源电压的应用范围可以从低至2.7 V到12v不等。

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GaAs amplifiers for radar and mobile communication systems

GaAs MMICs for frequency bands up to and above the X-band have been designed and manufactured in the planar DIOM process exhibiting not only performance data comparable to much higher cost processes but excellent uniformity and repeatability too. The application range for the supply voltage can vary from as low as 2.7 V to 12 V for receive and transmit circuits.

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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

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