基于16通道Mach-Zehnder调制器和5.35pJ/bit CMOS驱动器的800G集成硅光子发射机

Jingbo Shi, Han Liu, Tao Yang, Ming Jin, Haowen Shu, Fenghe Yang, Lei Shi, Yuansheng Tao, Jianrui Deng, Ruixuan Chen, Chan-Chung Han, Jian Liu, N. Wu, Nan Qi, Liyuan Liu
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引用次数: 0

摘要

提出了一种800G集成硅光子发射机,包括一个16通道光子集成芯片(PIC)和两个基于阵列行波双驱动Mach-Zehnder调制器(MZM)和两个8通道CMOS驱动器实现的电子芯片(eic)。所提出的多通道PIC是在具有220 nm厚硅层和$\mathbf{2}\ \boldsymbol{\mu} \mathbf{m}$厚埋氧化物(BOX)的高电阻绝缘体上硅(SOI)晶圆上使用代工厂CMOS工艺制造的,而驱动器则在标准$\mathbf{65}\mathbf{nm}$ CMOS工艺中实现。该驱动器采用分布式架构、2抽头前馈均衡(FFE)和推挽输出级的组合,在$\mathbf{50}\mathbf{\Omega}$负载下,实验显示平均带宽高于28.5GHz,差分摆幅为4.0Vpp。50Gb/s电眼图的rms抖动为1.41ps,光消光比(ER)超过3.0dB,功率效率为5.35pJ/bit。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An 800G Integrated Silicon-Photonic Transmitter based on 16-Channel Mach-Zehnder Modulator and Co-Designed 5.35pJ/bit CMOS Drivers
A 800G integrated silicon-photonic transmitter is presented, including a 16-channel photonic integrated chip (PIC) and two electrical chiplets (EICs) that are realized based on an arrayed travelling wave dual-drive Mach-Zehnder modulator (MZM) and two 8-channel CMOS drivers. The proposed multi-channel PIC is fabricated on a high-resistance silicon-on-insulator (SOI) wafer with a 220 nm thick silicon layer and a $\mathbf{2}\ \boldsymbol{\mu} \mathbf{m}$ thick buried oxide (BOX) using the foundry-ready CMOS process, while the drivers are implemented in a standard $\mathbf{65}\mathbf{nm}$ CMOS process. The driver employs a combination of distributed architecture, 2-tap feedforward equalization (FFE) and push-pull output stage, experimentally exhibiting an averaged bandwidth higher than 28.5GHz and a differential swing of 4.0Vpp on $\mathbf{50}\mathbf{\Omega}$ load, respectively. The 50Gb/s electrical eye-diagram is measured with 1.41ps rms-jitter, while the optical extinction ratio (ER) exceeds 3.0dB with 5.35pJ/bit power efficiency.
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