基于ETL可计算电容的量化霍尔电阻SI值

K. Shida, T. Wada, H. Nishinaka, K. Segawa, T. Igarashi
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引用次数: 0

摘要

提出了基于ETL可计算电容的量化霍尔电阻的SI值。对原有的测量系统进行了改进,并对部分测量技术进行了修改。测量工作正在进行中。我们将在CPEM'88上提出比以前更可靠的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SI Value of Qunatized Hall Resistance Based on ETL's Calculable Capacitor
SI value of quantized Hall resistanee based on ETL's calculable capacitor is presented. Some improvements of previous measurement systems were prooeeded and some parts of the measurement techniques were changed. The measurements are now in progress. We will present more reliable results than the previous one in CPEM'88.
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