圆柱型离子敏感场效应晶体管阈值电压建模的新方法

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441174

Mohendra Roy, Santanu Sharma

{"title":"圆柱型离子敏感场效应晶体管阈值电压建模的新方法","authors":"Mohendra Roy, Santanu Sharma","doi":"10.1109/ELECTRO.2009.5441174","DOIUrl":null,"url":null,"abstract":"There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel approach for modeling the threshold voltage of cylindrical Ion Sensitive Field Effect Transistor\",\"authors\":\"Mohendra Roy, Santanu Sharma\",\"doi\":\"10.1109/ELECTRO.2009.5441174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.\",\"PeriodicalId\":149384,\"journal\":{\"name\":\"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECTRO.2009.5441174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRO.2009.5441174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

许多科学技术分支对生物传感器的需求日益增长。离子敏感场效应晶体管(ISFET)是离子传感生物传感器的重要组成部分之一。ISFET是一种具有离子感应能力的场效应晶体管。它在制造复杂的传感设备方面有着无限的潜力。在这篇文章中，一个努力已经采取归因于圆柱形状对ISFET灵敏度的影响。与平面ISFET相比，圆柱形ISFET的阈值电压有所降低。本工作重点研究了平面和圆柱形ISFET的阈值电压随pH值的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel approach for modeling the threshold voltage of cylindrical Ion Sensitive Field Effect Transistor

There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

自引率

0.00%

发文量