砷化镓的长自旋记忆时间和翻转特性:超精细耦合效应

M. I. Miah
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引用次数: 3

摘要

在垂直于自旋的外磁场(B)存在的情况下,利用泵浦探针光致发光偏振测量研究了GaAs中光学自旋的翻转。发现自旋极化(PS)随时间延迟而衰减。观察到的PS衰减率与自旋翻转次数相对应。观察到一个特征的自旋翻转。在低晶格温度和高B条件下,自旋翻转(自旋记忆)时间最长,可达1.5 μs。然而,高于~4 T的电场使自旋翻转次数饱和。基于超细耦合效应对结果进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
LONG SPIN MEMORY TIMES AND FLIPPING FEATURES IN GaAs: THE HYPERFINE COUPLING EFFECT
The flipping of optically generated spins in GaAs was investigated using pump–probe photoluminescence polarization measurements in the presence of an external magnetic field (B) applied perpendicularly to the spins. The spin polarization (PS) was found to decay with the time delay. The observed PS decay rates correspond to the spin-flip times. A featurable spin flipping was observed. The spin-flip (spin memory) times are longest at low lattice temperature and high B, and times up to 1.5 μs were observed. However, a field higher than ~4 T saturates the spin-flip times. The results are discussed based on the hyperfine coupling effect.
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