{"title":"基于GaAs/AlGaAs的高速单行载流子光电二极管在小光电流和零偏置下的强带宽增强效应","authors":"F. Kuo, T.-C. Hsu, J. Shi","doi":"10.1109/LEOS.2009.5343086","DOIUrl":null,"url":null,"abstract":"Strong bandwidth-enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4 mA) and zero-bias operation. Equivalent-circuit-modeling results indicate that such effect is due to self-induced-field inside absorption layer, which benefits devices' high-speed performance under zero-power-consumption operation.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Strong bandwidth-enhancement effect in high-speed GaAs/AlGaAs based uni-traveling carrier photodiode under small photocurrent and zero-bias operation\",\"authors\":\"F. Kuo, T.-C. Hsu, J. Shi\",\"doi\":\"10.1109/LEOS.2009.5343086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Strong bandwidth-enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4 mA) and zero-bias operation. Equivalent-circuit-modeling results indicate that such effect is due to self-induced-field inside absorption layer, which benefits devices' high-speed performance under zero-power-consumption operation.\",\"PeriodicalId\":269220,\"journal\":{\"name\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2009.5343086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strong bandwidth-enhancement effect in high-speed GaAs/AlGaAs based uni-traveling carrier photodiode under small photocurrent and zero-bias operation
Strong bandwidth-enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4 mA) and zero-bias operation. Equivalent-circuit-modeling results indicate that such effect is due to self-induced-field inside absorption layer, which benefits devices' high-speed performance under zero-power-consumption operation.