An embedded gate graphene field-effect transistor with self-oxidized Al2O3 dielectrics

For the first time, an embedded gate graphene field-effect transistor (GFET) with a self-oxidized Al2O3 dielectric layer is proposed. The self-oxidized Al2O3 dielectric layer exhibits good quality and excellent insulation, and the self-oxidized Al2O3 dielectric layer dispels the step of depositing gate dielectrics. The gate leakage current is negligible because its value is only 0.1 nA even at Vgs=5 V. In the process flow of the GFETs, the graphene would experience much less contamination after being transferred onto a preprocessed substrate, because the following process steps is reduced when compared to those traditional top gate GFETs flows. The maximum gm is about 49 gS/gm at Vgs=1.45 V. The effective mobility is up to 2000cm².V^s.