1 MHz 4 ppm CMOS-MEMS振荡器,内置自检和亚毫瓦加热功率

Chun-You Liu, Ming-Huang Li, H. Ranjith, Sheng-Shian Li
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引用次数: 7

摘要

在这项工作中,已经展示了一个1 MHz 4 ppm温度稳定的微烤箱(μ烤箱)控制的单片CMOS-MEMS振荡器,在100°C的温度范围内显示出亚mw的加热功率。所提出的新型等温μOven平台由两个加热器组成,一个用于稳定谐振腔温度,另一个用于模拟环境温度的内置自检(BIST),以及一个用于局部谐振腔温度监测的电阻式温度检测器(RTD)。通过采用恒阻(CR)反馈温度控制方案,集成的1 MHz CMOS-MEMS振荡器在94°C测试范围(即< 43 ppb/°C)的快速温度斜坡期间显示最大频率误差仅为4 ppm。在1 khz偏置(Q = 1700)时,振荡器电路的最坏情况偏置不稳定性为60 ppb,相位噪声(PN)为- 105 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1 MHz 4 ppm CMOS-MEMS oscillator with built-in self-test and sub-mW ovenization power
A 1 MHz 4 ppm temperature-stable micro-oven μOven) controlled monolithic CMOS-MEMS oscillator has been demonstrated in this work, exhibiting heating power in sub-mW across the 100°C temperature span. The proposed novel isothermal μOven platform consists of dual heaters, one of which stabilizes the resonator temperature while the other of which serves as built-in self-test (BIST) to mimic ambient temperature, and a resistive temperature detector (RTD) for local resonator temperature monitoring. By adapting the constant-resistance (CR) feedback temperature control scheme, the integrated 1 MHz CMOS-MEMS oscillator shows a maximum frequency inaccuracy of only 4 ppm during a fast temperature ramp across the 94°C testing span (i.e., < 43 ppb/°C). The oscillator circuit shows a worst-case bias instability of 60 ppb and phase noise (PN) of −105 dBc/Hz at 1-kHz offset (Q = 1,700).
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