集成类C-VCO混频器2.45 GHz发射机在180nm CMOS技术

2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) Pub Date : 2017-10-01 DOI:10.1109/PRIMEASIA.2017.8280367

P. Shasidharan, H. Ramiah, J. Rajendran

{"title":"集成类C-VCO混频器2.45 GHz发射机在180nm CMOS技术","authors":"P. Shasidharan, H. Ramiah, J. Rajendran","doi":"10.1109/PRIMEASIA.2017.8280367","DOIUrl":null,"url":null,"abstract":"This paper presents on the Up-conversion mixer and Class-C CMOS LC VCO which operates at 2.45 GHz designed using 180 nm CMOS RF Technology. Voltage Controlled Oscillator, VCO combined with mixer design and achieves phase noise of −119 dBc/Hz and −131 dBc/Hz at 1 MHz and 3 MHz offset respectively. The system consumes 2.04 mW from 1.2 V supply. The measured Figure of Merit (FoM) reaches 182.08 dBc/Hz at 1 MHz offset. The passive mixer recorded third-order input intercept point (IIP3) of 13.28 dBm and 1-dB compression point (P1dB) of 5.17 dBm. This mixer design generates a stable matching at −23.91 dB and achieves a good port to port isolation of −61 dB.","PeriodicalId":335218,"journal":{"name":"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","volume":"279 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Integrated Class C-VCO — Mixer for 2.45 GHz transmitter in 180nm CMOS technology\",\"authors\":\"P. Shasidharan, H. Ramiah, J. Rajendran\",\"doi\":\"10.1109/PRIMEASIA.2017.8280367\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents on the Up-conversion mixer and Class-C CMOS LC VCO which operates at 2.45 GHz designed using 180 nm CMOS RF Technology. Voltage Controlled Oscillator, VCO combined with mixer design and achieves phase noise of −119 dBc/Hz and −131 dBc/Hz at 1 MHz and 3 MHz offset respectively. The system consumes 2.04 mW from 1.2 V supply. The measured Figure of Merit (FoM) reaches 182.08 dBc/Hz at 1 MHz offset. The passive mixer recorded third-order input intercept point (IIP3) of 13.28 dBm and 1-dB compression point (P1dB) of 5.17 dBm. This mixer design generates a stable matching at −23.91 dB and achieves a good port to port isolation of −61 dB.\",\"PeriodicalId\":335218,\"journal\":{\"name\":\"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)\",\"volume\":\"279 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PRIMEASIA.2017.8280367\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRIMEASIA.2017.8280367","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了采用180nm CMOS射频技术设计的上变频混频器和工作频率为2.45 GHz的c类CMOS LC压控振荡器。压控振荡器(VCO)与混频器设计相结合，在1mhz和3mhz偏移量下分别实现了- 119 dBc/Hz和- 131 dBc/Hz的相位噪声。系统从1.2 V电源消耗2.04 mW。在1mhz偏移时，测量到的性能因数(FoM)达到182.08 dBc/Hz。无源混频器记录的三阶输入截距点(IIP3)为13.28 dBm, 1 db压缩点(P1dB)为5.17 dBm。该混频器设计在−23.91 dB产生稳定的匹配，并实现−61 dB的良好端口到端口隔离。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Integrated Class C-VCO — Mixer for 2.45 GHz transmitter in 180nm CMOS technology

This paper presents on the Up-conversion mixer and Class-C CMOS LC VCO which operates at 2.45 GHz designed using 180 nm CMOS RF Technology. Voltage Controlled Oscillator, VCO combined with mixer design and achieves phase noise of −119 dBc/Hz and −131 dBc/Hz at 1 MHz and 3 MHz offset respectively. The system consumes 2.04 mW from 1.2 V supply. The measured Figure of Merit (FoM) reaches 182.08 dBc/Hz at 1 MHz offset. The passive mixer recorded third-order input intercept point (IIP3) of 13.28 dBm and 1-dB compression point (P1dB) of 5.17 dBm. This mixer design generates a stable matching at −23.91 dB and achieves a good port to port isolation of −61 dB.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)

自引率

0.00%

发文量