矢量大信号测量验证RF大信号器件模型的能力

D. Schreurs, E. Vandamme, S. Vandenberghe
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引用次数: 5

摘要

片上系统实现的趋势收紧了设计规范,因此对器件模型提出了高精度要求。本文概述了利用矢量大信号测量来验证射频MOSFET模型的大信号精度的剩余价值。我们表明这些模型可以在接近实际应用的操作条件下进行评估,例如与负载拉相结合的互调特性。大信号模型验证并不局限于模拟应用,因为也可以检查数字电路(如逆变器)的RF大信号性能。在本文中,我们重点讨论了BSIM3v3紧凑模型和内部开发的大信号查找表模型的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Capabilities of Vectorial Large-Signal Measurements to Validate RF Large-Signal Device Models
The trend towards system-on-chip realisation tightens the design specifications and consequently imposes high accuracy requirements on device models. This paper presents an overview of the surplus value of using vectorial large-signal measurements to validate the large-signal accuracy of RF MOSFET models. We show that these models can be evaluated at operating conditions close to real applications, such as intermodulation characterisation combined with loadpull. The large-signal model verification is not limited to analogue applications, because also the RF large-signal performance of digital circuits, such as inverters, can be examined. In this paper, we focus to the results obtained for the BSIM3v3 compact model and for the in-house developed large-signal look-up table model.
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