热电冷却下XBn T2SLs InAs/InAsSb/B-AlAsSb中波探测器的理论建模

2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-11-01 DOI:10.1109/NUSOD.2018.8570269

P. Martyniuk, K. Michalczewski, T. Tsai, C. H. Wu, Y. R. Wu

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引用次数: 1

摘要

本文报道了在热电冷却下工作的中波红外InAs/InAsSb (xSb = 0.4) ii型超晶格。在分析的温度范围内，证明AlAsSb (xSb = 0.97)势垒是合适的材料，没有在价带中引入额外的势垒。在T ~ 100 K下，模拟结构的最高探测率为~ 1012琼斯能级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

The paper reports on the barrier mid-wave infrared InAs/InAsSb (xSb = 0.4) type-II superlattice operating below thermoelectrical cooling. AlAsSb (xSb = 0.97) barrier was proved to be proper material not introducing extra barrier in valence band in analyzed temperature range. The highest detectivity of the simulated structure was assessed at the level of ~ 10¹² Jones at T ~ 100 K.

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2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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