{"title":"一种90 nm CMOS制程的w波段/ 1.5注入锁定分频器","authors":"Yen-Liang Yeh, Meng-Han Li, Hong-Yeh Chang","doi":"10.1109/MWSYM.2014.6848332","DOIUrl":null,"url":null,"abstract":"A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the power amplifier. The measured input locking range is from 91 to 93.7 GHz, and the free-running oscillation frequency is 30.74 GHz. The dc supply voltage and power consumption are 0.8 V and 6.4 mW, respectively. The chip size is 0.86 × 0.87 mm2.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A W-band divide-by-1.5 injection-locked frequency divider in 90 nm CMOS process\",\"authors\":\"Yen-Liang Yeh, Meng-Han Li, Hong-Yeh Chang\",\"doi\":\"10.1109/MWSYM.2014.6848332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the power amplifier. The measured input locking range is from 91 to 93.7 GHz, and the free-running oscillation frequency is 30.74 GHz. The dc supply voltage and power consumption are 0.8 V and 6.4 mW, respectively. The chip size is 0.86 × 0.87 mm2.\",\"PeriodicalId\":262816,\"journal\":{\"name\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2014.6848332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A W-band divide-by-1.5 injection-locked frequency divider in 90 nm CMOS process
A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the power amplifier. The measured input locking range is from 91 to 93.7 GHz, and the free-running oscillation frequency is 30.74 GHz. The dc supply voltage and power consumption are 0.8 V and 6.4 mW, respectively. The chip size is 0.86 × 0.87 mm2.