化学溶液法沉积单层ZnO上MgO薄膜的电学、介电和结构性能

Z. Habibah, N. Syafawati, L. N. Ismail, R. A. Bakar, M. H. Mamat, M. Rusop
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引用次数: 0

摘要

采用I-V测量、阻抗谱分析仪和场发射扫描电镜(FESEM)研究了简单化学沉积法制备的多层ZnO/MgO薄膜的电学、介电和结构性能。结果表明,退火温度对ZnO/MgO多层膜的电学性能、介电性能和结构性能均有影响。退火温度从400℃升高到500℃,间隔25℃,薄膜致密,颗粒小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical, dielectric and structural properties of MgO thin films deposited on single layer ZnO using chemical solution method
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer films. Denser films and small particles are produced as the annealing temperature increase from 400°C to 500°C with 25°C interval.
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