用中子辐照测量挥发性sram和非挥发性flash fpga之间的SER

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745707

Yuya Kawano, Yuto Tsukita, J. Furuta, Kazutoshi Kobayashi

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引用次数: 0

摘要

我们在基于sram和基于闪存的fpga上实现了50k位移位寄存器，以研究它们的辐射硬度。因此，两个fpga上触发器的软错误率都在40 FIT/Mbit左右。基于sram的平均故障时间(MTTF)为$3.8 \乘以10^{7}$小时/次，而基于flash的MTTF为$5.5 \乘以10^{9}$小时/次。这些结果清楚地表明，与基于闪存的FPGA相比，基于sram的FPGA必须重新启动或刷新配置内存的频率要高得多。

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Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs

We implemented 50k-bit shift registers on SRAM-based and flash-based FPGAs to investigate their radiation hardness. As a result, soft error rates of flip flops on both FPGAs are around 40 FIT/Mbit. Mean time to failure (MTTF) in the SRAM-based one is $3.8 \times 10^{7}$ hour/failure, while MTTF in flash-based one is $5.5 \times 10^{9}$ hour/failure. Those results clearly show that in the SRAM-based FPGA must be rebooted or configuration memory must be refreshed much more frequently than the flash-based one.

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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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