不同变化FinFET的完整解析模型

2013 39th Annual Northeast Bioengineering Conference Pub Date : 2013-04-05 DOI:10.1109/NEBEC.2013.6

J. Mohseni, J. Meindl

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引用次数: 3

摘要

在这里，我们提出了一个完整的分析模型，描述了多栅极MOSFET的所有变化，包括三栅极FinFET(图1)，全能栅极FinFET，梯形FinFET，双栅极MOSFET等。接下来，我们给出了理想矩形finfet和梯形finfet之间的完整比较。最后，我们首次提出了矩形和梯形finfet缩放的极限。

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Complete Analytical Model for Different Variations of FinFET

Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Next we present a complete comparison between ideal rectangular FinFETs and trapezoidal FinFETs. Finally, for the first time, we present the ultimate limit for scaling of rectangular and trapezoidal FinFETs.

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2013 39th Annual Northeast Bioengineering Conference

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