超薄体pfet中Si(100)和Si(110)空穴迁移率方向依赖性的实验研究

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193363

T. Kutsuki, K. Shimizu, H. Nomura, T. Saraya, T. Hiramoto

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引用次数: 1

摘要

在(100)和(110)UTB pfet中，空穴迁移率的方向依赖性已经用专门用于方向依赖性测量的特殊测试装置结构进行了实验研究。发现在量子约束下，SOI厚度为5nm的(100)UTB pfet不存在方向依赖性。另一方面，在(110)UTB pfet中，空穴迁移率在;;在低温和高反转载流子密度时减小。

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Experimental investigation on direction dependence of Si (100) and Si (110) hole mobility in ultra-thin body pFETs

The direction dependence of hole mobility in (100) and (110) UTB pFETs has been investigated experimentally using special test device structures exclusive for the direction dependence measurements. It is found that there is no direction dependence under quantum confinement in (100) UTB pFETs with SOI thickness of 5nm. On the other hand, in (110) UTB pFETs, it is shown that hole mobility superiority in <;110>; to <;100>; decreases at low temperature and in high inversion carrier density.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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