1981 International Conference on Submillimeter Waves and Their Applications
Pub Date : 1981-12-01
DOI:10.1109/ICSWA.1981.9335111
引用次数: 0
摘要
我们报告了在100 GHz至800 GHz的MITATT或TUNNETT模式下工作的GaAs突变pn结二极管的理论研究。由于注入脉冲宽度的影响，没有发现最大频率限制。Nishizawa等人的实验结果。的观点与这一理论一致。我们的研究结果表明，GaAs mittat或TUNNETTs可以以显著的效率运行，大约5%，至少高达500 GHz。本文章由计算机程序翻译，如有差异，请以英文原文为准。
GaAs Abrupt Junction Mitatt and Tunnett
We report a theoretical investigation on the GaAs abrupt pn junction diodes to be operated in the MITATT or TUNNETT mode from 100 GHz to 800 GHz. No maximum frequency limitation is found due to the effect of injection pulse width. The experimental results by Nishizawa et.al., are in agreement with the theory. Our results indicate that GaAs MITTATs or TUNNETTs can operate with significant efficiency, around 5%, at least up to 500 GHz.
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