介电表面附近高斯形状横向射频电场的多因子抑制

D. Wen, A. Iqbal, C. Scutt, P. Zhang, J. Verboncoeur
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引用次数: 0

摘要

高功率微波广泛应用于天基通信系统,微波窗口附近的多因素放电一直是一个限制因素[1]。多因子的缓解对于避免电离击穿和改善信号传输具有重要意义[1]-[3]。在这项工作中,工程高斯波形横向电场被证明能够在固定的输入功率密度为1.2X10 10 W/m 2的情况下将多因子强度降低一个数量级[3],并且还通过动态粒子模拟和多粒子蒙特卡罗模拟[4],[5]研究了多因子对射频电场振幅的相应敏感性。结果表明,当高斯波形Δτ = 0.15T的半峰宽较大,T = 1ns的rf周期时,多乘子的磁化率与单频正弦波形驱动的多乘子相似。而在半峰宽Δτ = 0.07T处,多因子强度随射频电场幅值的增大而减小,单位增长率在射频电场幅值与直流恢复电场平面上呈闭合曲线,说明高斯波形在实际应用中对多因子的抑制是有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multipactor Mitigation Via Gaussian-Shape Transverse rf Electric Field Near a Dielectric Surface
High power microwaves are widely used in space-based communication systems, where multipactor discharges near the microwave window have been a limiting factor [1] . The mitigation of multipactor is of importance for avoiding ionization breakdown and improving signal transmission [1] - [3] . In this work, an engineered Gaussian waveform transverse electric field is demonstrated to be capable of reducing the multipactor strength by an order of magnitude for a fixed input power density 1.2X10 10 W/m 2 [3] , and the corresponding susceptibility of multipactor versus the rf electric field amplitude is also investigated via kinetic particle-in-cell simulations and multi-particle Monte Carlo simulations [4] , [5] . The results show that, at a larger half peak width of the Gaussian waveform Δτ = 0.15T with T = 1ns the rf period, the susceptibility of multipactor is similar to that of a single frequency sinusoidal waveform-driven multipactor. However, at a decreased half peak width Δτ = 0.07T, the multipactor strength decreases with increasing rf electric field amplitude, the unit growth rate is a closed curve in the plane of rf electric field amplitude and dc restoring electric field, implying the effectiveness of Gaussian waveforms in mitigating multipactor in real applications.
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