Device Simulation of Negative-Capacitance Field-Effect Transistors With a Ferroelectric Gate Insulator

We consider the method to simulate negative-capacitance field-effect transistors having a ferroelectric film as a gate insulator in the framework applicable to technology computer-aided design device simulators and propose a method with complete applicability. In the method, the behavior of the polarization in ferroelectrics is described by the Landau-Khalatnikov equation and it is solved simultaneously with the Poisson equation to obtain the distribution of the polarization and electrostatic potential. Also, the proposed method enables the device simulators to take into account a factor related to forming domain structures of the polarization.