模式转换优化4.5 kV IGTT (IGBT模式关断可控硅)

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509494

M. Yamaguchi, T. Ogura, H. Ninomiya, H. Ohashi

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引用次数: 3

摘要

首次描述了一种4.5 kV IGBT模式关断可控硅(IGTT)，该IGTT具有优化的模式转换，可实现低功耗，即低正向压降(V/sub - f/)和低关断损耗(E/sub -off /)。通过IGBT模式关闭操作结合质子(H/sup +/)辐照技术，论证了优化垂直载流子分布的器件概念。当阳极电流密度为25 A/cm/sup 2/时，V/sub f/为2.1 V, E/sub off/值为18 mJ/cm/sup 2/。这个E/sub off/值比传统mos门控晶闸管的值小30 - 35%。因此，在4.5 kV器件中，V/sub / f/和E/sub / off/之间的权衡关系得到了极大的改善。

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Mode-transition optimized 4.5 kV IGTT (IGBT mode turn-off thyristor)

A 4.5 kV IGBT mode turn-off thyristor (IGTT) with optimized mode-transition for realizing a low power loss, that is, a low forward voltage drop (V/sub f/) and a low turn-off loss (E/sub off/) is described for the first time. The device concept of optimizing the vertical carrier distribution was demonstrated by the IGBT mode turn-off operation combined with the proton(H/sup +/)-irradiation technique. The E/sub off/ value of 18 mJ/cm/sup 2/ was attained with V/sub f/ of 2.1 V at an anode current density of 25 A/cm/sup 2/. This value of E/sub off/ is 30 to 35% smaller than that for conventional MOS-gated thyristors. As a result, the trade-off relation between V/sub f/ and E/sub off/ is greatly improved for 4.5 kV devices.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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