I. Kallfass, F. Gruson, P. Abele, K. Michelakis, T. Hackbarth, K. Hieber, J. Muller, H. Schumacher
{"title":"一种低转换损耗的大型HEMT混频器集成电路","authors":"I. Kallfass, F. Gruson, P. Abele, K. Michelakis, T. Hackbarth, K. Hieber, J. Muller, H. Schumacher","doi":"10.1109/EUMA.2003.340976","DOIUrl":null,"url":null,"abstract":"The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 ¿m gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of ¿8.8dBm input related 1dB compression point.","PeriodicalId":156210,"journal":{"name":"2003 33rd European Microwave Conference, 2003","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A SiGe HEMT Mixer IC with Low Conversion Loss\",\"authors\":\"I. Kallfass, F. Gruson, P. Abele, K. Michelakis, T. Hackbarth, K. Hieber, J. Muller, H. Schumacher\",\"doi\":\"10.1109/EUMA.2003.340976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 ¿m gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of ¿8.8dBm input related 1dB compression point.\",\"PeriodicalId\":156210,\"journal\":{\"name\":\"2003 33rd European Microwave Conference, 2003\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 33rd European Microwave Conference, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.2003.340976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 33rd European Microwave Conference, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.2003.340976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 ¿m gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of ¿8.8dBm input related 1dB compression point.
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