一种采用0.5 μm E-Mode InGaAs pHEMT技术的1 - 4ghz低噪声放大器

2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE) Pub Date : 2017-10-01 DOI:10.1109/MAPE.2017.8250855

Hairui Song, Shu Yu, Yu-feng Guo, Shanwen Hu

{"title":"一种采用0.5 μm E-Mode InGaAs pHEMT技术的1 - 4ghz低噪声放大器","authors":"Hairui Song, Shu Yu, Yu-feng Guo, Shanwen Hu","doi":"10.1109/MAPE.2017.8250855","DOIUrl":null,"url":null,"abstract":"This paper presents a 1–4 GHz low noise amplifier (LNA) for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20–23 dB, a noise figure of 1.8–2.3 dB during 1–4 GHz frequency range. The input S11 is −13dB∼-10dB and the output S22 is −18dB∼-10dB. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode InGaAs pHEMT Process and occupies 0.96 mm<sup>2</sup> area. The power consumption is 250 mW with 5 V supply.","PeriodicalId":320947,"journal":{"name":"2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 1–4 GHz low noise amplifier in 0.5-μm E-Mode InGaAs pHEMT technology\",\"authors\":\"Hairui Song, Shu Yu, Yu-feng Guo, Shanwen Hu\",\"doi\":\"10.1109/MAPE.2017.8250855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 1–4 GHz low noise amplifier (LNA) for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20–23 dB, a noise figure of 1.8–2.3 dB during 1–4 GHz frequency range. The input S11 is −13dB∼-10dB and the output S22 is −18dB∼-10dB. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode InGaAs pHEMT Process and occupies 0.96 mm<sup>2</sup> area. The power consumption is 250 mW with 5 V supply.\",\"PeriodicalId\":320947,\"journal\":{\"name\":\"2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAPE.2017.8250855\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAPE.2017.8250855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了一种用于宽带通信系统的1 - 4ghz低噪声放大器。为了提高高频增益，提出了一种电容反馈增益补偿电路。在1-4 GHz频率范围内，LNA的电压增益为20-23 dB，噪声系数为1.8-2.3 dB。输入S11为−13dB ~ -10dB，输出S22为−18dB ~ -10dB。该电路采用门长为0.5 μm的E-Mode InGaAs pHEMT工艺实现，面积为0.96 mm2。功耗为250mw, 5v供电。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1–4 GHz low noise amplifier in 0.5-μm E-Mode InGaAs pHEMT technology

This paper presents a 1–4 GHz low noise amplifier (LNA) for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20–23 dB, a noise figure of 1.8–2.3 dB during 1–4 GHz frequency range. The input S11 is −13dB∼-10dB and the output S22 is −18dB∼-10dB. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode InGaAs pHEMT Process and occupies 0.96 mm² area. The power consumption is 250 mW with 5 V supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)

自引率

0.00%

发文量