冲击电离转移电子氮化镓二极管中的谐波产生

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676309

O. Botsula, D. Pavlenko, E. Prokhorov, S.S. Vilnivetsky

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引用次数: 0

摘要

已经考虑了氮化镓二极管中的冲击电离。参考化合物为在输入电离条件下(电场大于阈值场的3倍或5倍，效率为11倍)工作的厘米和毫米波范围转移电子器件的制造提供了前景。13%)。证明了氮化镓转移电子器件在谐波运行下的振荡效率值。

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Harmonic generation in transfer electron GaN diodes with impact ionization

Impact ionization in GaN diodes have been considered. The reference compounds are perspective for fabricating of centimeter and millimeter wave range transferred electron devices operating at input ionization conditions (electric field above 3 or 5 times of the threshold field and efficiency of 11...13 % ) have been shown. The value of GaN transfer electron devices oscillation efficiency to be obtained at harmonic operation has been demonstrated.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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