工艺设备晶圆充装及其与GMR磁头充装损坏的关系

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/6104.930956

W. Lukaszek

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引用次数: 1

摘要

在CMOS集成电路制造中，对加工设备中的器件充电损伤有大量的认识和理解。本文介绍了CMOS IC中栅极氧化物损伤的基本充电机制，并通过在现代IC加工设备中获得的测量实例说明了这些机制，描述了集成电路和设备制造商成功地使用的晶圆充电表征方法来量化工艺设备中的晶圆充电，并展示了如何将这些知识应用于GMR头晶圆加工中的充电损伤控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wafer charging in process equipment and its relationship to GMR heads charging damage

A significant amount of knowledge and understanding of device charging damage in processing equipment exists in CMOS IC manufacturing. This paper introduces the basic charging mechanisms responsible for gate oxide damage in CMOS ICs, illustrates these mechanisms with examples of measurements obtained in contemporary IC processing equipment, describes a wafer charging characterization method successfully used by integrated circuit and equipment manufacturers to quantify wafer charging in process equipment, and shows how this knowledge could be applied to the control of charging damage in GMR head wafer processing.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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