一种紧凑的0.13 μm CMOS脉冲电荷泵

2007 IEEE Custom Integrated Circuits Conference Pub Date : 2007-09-01 DOI:10.1109/CICC.2007.4405757

J. Holleman, B. Otis, C. Diorio

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引用次数: 14

摘要

在本文中，我们提出了一类新的电荷泵，能够在单个时钟周期内产生比电源高3.75倍的电压。它在0.13 μm CMOS工艺中占地0.005 mm2，可以在0.4 V到1.2 V之间或低至0.2 V的电源电压下工作，并且具有一定的脉冲形状畸变。我们的充电泵可以提供高达3.9 V的输出电压，待机功耗小于10 nW。

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A compact pulse-based charge pump in 0.13 μm CMOS

In this paper, we present a new class of charge pump capable of generating voltages 3.75 × greater than the supply in a single clock cycle. It occupies .005 mm2 in a 0.13 μm CMOS process and can operate with a supply voltage between 0.4 V and 1.2 V, or as low as 0.2 V with some pulse-shape distortion. Our charge pump can provide output voltages of up to 3.9 V with less than 10 nW of standby power dissipation.

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2007 IEEE Custom Integrated Circuits Conference

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