C. Duvvury, Sridhar Ramaswamy, A. Amerasekera, R. Cline, Bernhard H. Andresen, V. Gupta
{"title":"用于ESD保护应用的基板泵NMOS","authors":"C. Duvvury, Sridhar Ramaswamy, A. Amerasekera, R. Cline, Bernhard H. Andresen, V. Gupta","doi":"10.1109/EOSESD.2000.890022","DOIUrl":null,"url":null,"abstract":"The use of a substrate pump to achieve uniform npn protection in a multi-finger NMOS is reported for advanced CMOS technologies with silicide. The novel feature of this device technique is the implementation of a floating guardring to effectively pump the local substrate of the protection NMOS. SPICE simulations are presented to illustrate the device concept as well as the device design optimization.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"80","resultStr":"{\"title\":\"Substrate pump NMOS for ESD protection applications\",\"authors\":\"C. Duvvury, Sridhar Ramaswamy, A. Amerasekera, R. Cline, Bernhard H. Andresen, V. Gupta\",\"doi\":\"10.1109/EOSESD.2000.890022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of a substrate pump to achieve uniform npn protection in a multi-finger NMOS is reported for advanced CMOS technologies with silicide. The novel feature of this device technique is the implementation of a floating guardring to effectively pump the local substrate of the protection NMOS. SPICE simulations are presented to illustrate the device concept as well as the device design optimization.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"80\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Substrate pump NMOS for ESD protection applications
The use of a substrate pump to achieve uniform npn protection in a multi-finger NMOS is reported for advanced CMOS technologies with silicide. The novel feature of this device technique is the implementation of a floating guardring to effectively pump the local substrate of the protection NMOS. SPICE simulations are presented to illustrate the device concept as well as the device design optimization.