单栅长MOSFET非对称源漏电阻提取技术

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551676

P. Oldiges, Chen Zhang, Xin He Miao, M. Kang, T. Yamashita

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引用次数: 1

摘要

提出了一种简单的在线测量技术，用于提取单个MOSFET器件上的源极、漏极和通道的单个电阻分量。通过建模数据验证了该方法的有效性。这种方法可以应用于对称或非对称器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Technique for Asymmetric Source/Drain Resistance Extraction on a Single Gate Length MOSFET

A simple inline measurement technique for extracting the individual resistance components of the source, drain, and channel on a single MOSFET device using DC measurements is proposed. Modeling data is used to prove the efficacy of the technique. This method can be applied to symmetric or asymmetric devices.

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来源期刊

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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