采用动态电路技术的全静态CMOS 16k RAM

ESSCIRC 80: 6th European Solid State Circuits Conference Pub Date : 1980-09-01 DOI:10.1109/ESSCIRC.1980.5468762

Y. Akatsuka, Y. Nagahashi, I. Sasaki, K. Eguchi, N. Hotta

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引用次数: 4

摘要

采用动态电路技术实现了一种全静态CMOS 16k RAM，其快速访问时间为87ns，周期时间为200ns，功耗仅为79mW。

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Fully Static CMOS 16k RAM using Dynamic Circuitry Technique

A fully static CMOS 16k RAM with fast access time of 87ns and very low power dissipation of 79mW for 200ns cycle time has been realized using dynamic circuitry technique.

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ESSCIRC 80: 6th European Solid State Circuits Conference

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