通道厚度1.2nm/0.6nm的高驱动低漏电流MBC场效应管

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371941

Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Liwei Liu, Xiang Hou, Huawei Chen, Jiayi Li, Yu-Gang Jiang, David-Wei Zhang, P. Zhou

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引用次数: 8

摘要

我们展示了2级堆叠的多桥通道(MBC)场效应管，通道厚度仅为0.6nm和1.2nm，这是目前报道的最薄的MBC场效应管。单个堆叠通道的归一化驱动电流为13.2μA•μm/μm (VDS=1V)，可与最新的7级堆叠Si MBC场效应管相媲美。此外，该超薄MBC FET具有非常低的每级漏电流(0.92pA•μm/μm, VDS=1V)，仅为Si MBC FET的6.5%。我们还探索了一种自对准边接触工艺，为更高水平堆叠超薄MBC场效应管铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2nm/0.6nm

We demonstrate a 2-levels-stacked multi-bridge-channels (MBC) FET with channel thickness only 0.6nm and 1.2nm which is the thinnest channel record among reported MBC FET. The normalized drive current of a single stacked channel is 13.2μA•μm/μm (VDS=1V) which is comparable to the latest 7-levels-stacked Si MBC FET. What’s more, this ultrathin MBC FET demonstrates a very low leakage current per level (0.92pA•μm/μm, VDS=1V), only 6.5% of the value of the Si MBC FET. We also explore a self-aligned edge-contact process, paving the way toward higher-levels-stacked ultrathin MBC FET.

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2020 IEEE International Electron Devices Meeting (IEDM)

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