Pulsed laser deposition of ZnO: comparison between deposition from Zn and ZnO target

ZnO thin layers are promising materials for near UV emission and absorption optical devices, mainly for its relatively wide band gap (3.4 eV at 4.2 K). However, the problems with the optimal growth of the ZnO thin layer depositions are not satisfactory solved. The aim of this study was to compare differences between the layers deposited from the pure Zn target and the target from sintered ZnO. The growth of ZnO thin layers was performed on sapphire substrate under various conditions. The layers were prepared by the pulsed laser deposition using THG Nd:YAG laser at 355 nm. Characteristics of the layers were examined using the methods of atomic force microscopy, scanning electron microscopy and energy dispersive x-ray microanalyses.