一个40/85 GHz双频，双向可变增益放大器

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697680

Tissana Kijsanayotin, J. Buckwalter

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引用次数: 1

摘要

提出了一种用于毫米波前端的CMOS绝缘体上硅(SOI)双频双向放大器。电路由电子控制，在40 GHz (Q-band)或81 GHz (W-band)方向上进行正向或反向放大。所测放大器在40 GHz和81 GHz时的增益变化为20 dB，峰值增益为4.6 dB。该电路采用45纳米CMOS SOI工艺制造，有源面积仅占0.17 mm2的芯片空间。

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A 40/85 GHz dual-band, bidirectional variable gain amplifier

A dual-band, bidirectional amplifier is proposed for millimeter-wave front-ends in CMOS silicon-on-insulator (SOI). The circuit is electronically controlled to amplify in either the forward or reverse direction at either 40 GHz (Q-band) or 81 GHz (W-band). The measured amplifier has a gain variation of 20 dB with a peak gain of 4.6 dB at both 40 GHz and 81 GHz. The circuit is fabricated in a 45-nm CMOS SOI process with an active area occupying only 0.17 mm2 of die space.

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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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