低噪声全单端宽带接收机前端采用InGaAs pHEMT技术

Zhengyu Sun, Hongwen Yang, Lijun Zhang, Yuepeng Yan
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引用次数: 3

摘要

本文演示了采用0.5μm InGaAs E-mode pHEMT技术的全单端宽带接收器前端。接收机由一个宽带低噪声放大器(LNA)和一个带有源平衡器的宽带混频器组成。采用改进的Kukielka LNA,增加了LC-ladder匹配网络进行带宽扩展和噪声优化。设计了一种新型的开关式晶体管混频器,该混频器内嵌有源平衡器用于本振(LO)信号。实测结果表明,在0.7 ~ 5.2 GHz的整个频率范围内,前端可实现26 ~ 29 dB的转换增益,2.6 ~ 4.4 dB的双边带噪声系数。基于所提出的前端,还提出了在带宽内具有35 dBc图像抑制的图像抑制接收器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low noise fully single-ended broadband receiver front-end with InGaAs pHEMT technology
This paper demonstrates a fully single-ended broadband receiver front-end using a 0.5μm InGaAs E-mode pHEMT technology. The receiver consists of a wideband low-noise amplifier (LNA) and a wideband mixer with active baluns. A modified Kukielka LNA with the added LC-ladder matching network for bandwidth extension and noise optimization is employed. A new switched transconductor mixer embedded with an active balun for the local oscillator (LO) signal is designed. Measured results show that the front-end can achieve conversion gain of 26-29 dB, double sideband noise figure of 2.6-4.4 dB over the entire frequency range of 0.7 to 5.2 GHz. Based on the proposed front-end, an image-reject receiver is also presented with an image rejection of 35 dBc within the bandwidth.
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