锁相环合成器中高性能CMOS电荷泵的设计

Ningbing Hou, Zhiqun Li
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引用次数: 6

摘要

传统电荷泵都存在电流不匹配的问题,而电流不匹配是锁相环相位噪声的主要影响因素。提出了一种基于0.18μm CMOS工艺的高性能电荷泵电路。带参考电路和自偏置级联电流镜的轨对轨误差运算放大器使电荷泵电流在较宽的输出电压范围内得到很好的匹配。仿真结果表明,当电荷泵电流为100μA时,在0.01V ~ 1.6V的输出电压范围内,电流失配率小于0.01%。该电路从单个1.8 v电源耗散3mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of high performance CMOS charge pump for phase-locked loops synthesizer
Conventional charge pumps (CPs) all share a problem of current mismatching, which dominates the phase noise of phase-locked loop (PLL). A high performance charge pump circuit in 0.18μm CMOS process is presented. A rail-to-rail error operational amplifier with reference circuit and self-biasing cascode current mirror enables the charge pump current to be well matched in a wide output voltage range. Simulation results show that the current mismatching can be less than 0.01% within output voltage range of 0.01V to 1.6V, with the charge pump current of 100μA. The circuit dissipates 3mW from a single 1.8-V supply.
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