基于高效CMOS-GaN射频脉宽调制发射机的线性化研究

M. Ozen, C. M. Andersson, T. Eriksson, M. Acar, R. Jos, C. Fager
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引用次数: 9

摘要

本文研究了一种2ghz,峰值输出功率10w的射频脉宽调制(RF- pwm)发射机的线性度。变送器采用可调负载网络e级PA作为最终输出级。可调负载网络能够动态优化e类以及占空比,从而在广泛的输出功率水平范围内实现高效率。为了提高发射机的线性度,提出了一种基于数字预失真的线性化方案。在线性化后,发射机的相邻信道功率比(ACPR)为-45 dBc, W-CDMA信号的峰均功率比(PAPR)为3.84 MHz, 6.7 dB。GaN HEMT输出级的平均漏极效率为67%,总发射机效率为54%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Linearization study of a highly efficient CMOS-GaN RF pulse width modulation based transmitter
This paper studies linearity of a 2 GHz, 10 Watt peak output power RF pulse width modulation (RF-PWM) based transmitter. The transmitter incorporates a tunable load network class-E PA as the final output stage. The tunable load network enables dynamic optimization of the class-E along with the duty cycle resulting in high efficiency over a wide range of output power levels. A digital predistiortion based linearization scheme is proposed to enhance the linearity of the transmitter. After linearization, the transmitter exhibits an adjacent channel power ratio (ACPR) of -45 dBc with a 3.84 MHz, 6.7 dB peak-to-average power ratio (PAPR) W-CDMA signal. The average drain efficiency of the GaN HEMT output stage is 67% and the total transmitter efficiency is 54%.
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