BST/Al0.3Ga0.7N/GaN双异质结构中的二维电子气体

2009 International Conference on Applied Superconductivity and Electromagnetic Devices Pub Date : 2009-10-30 DOI:10.1109/ASEMD.2009.5306665

Y. Liu, Chuan-ren Yang, Jihua Zhang, Song Wu, Hongwei Chen

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引用次数: 0

摘要

本文考虑了BST和AlGaN的自发极化效应和压电极化效应。在BST/ Al0.3Ga0.7N /GaN双异质结构的异质界面处，采用非均匀网格的一维泊松-薛定谔方程与BST的极化和厚度以及AlGaN势垒层厚度相关，得到了自一致的解。研究了BST/Al0.3Ga0.7N/GaN双异质结构导带和二维电子气密度。结果表明，BST/Al0.3Ga0.7N/GaN的2DEG密度大于Al0.3Ga0.7N/GaN，对于AlGaN/GaN结构上的8nm BST, 2DEG密度达到1.85×1013 cm−2，比AlGaN/GaN结构的2DEG密度高23%。

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The two dimensional eelectron gas in BST/Al0.3Ga0.7N/GaN double heterostructure

In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al0.3Ga0.7N/GaN is larger than that of Al0.3Ga0.7N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×10¹³ cm⁻², which is 23% higher than that of AlGaN/GaN structure.

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2009 International Conference on Applied Superconductivity and Electromagnetic Devices

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