基于CNTFET的低功率互补电流控制偏斜延迟压控振荡器的设计

Smriti Kantroo, Vikram Singh, Ritika Mattoo, Neeraj Tripathi, A. Bhardwaj
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引用次数: 0

摘要

本文提出了一种工作在宽频率范围内的四级压控环振荡器(VCO),该振荡器功耗低,性能好,稳定性好。由于MOSFET的一些限制,如高功率和漏电流,它们不能在一定范围后按比例缩小。为了克服这个缺点,我们使用了碳纳米管代替硅的CNTFET技术。本文中使用CNTFET制作的压控振荡器工作在太赫兹频率范围内,从0.331太赫兹到0.091太赫兹,类似地,控制电压为0到1伏,功耗范围为0.9565到0.2506 mW。与基于CMOS技术的VCO相比,该VCO的功耗提高了97.7%,频率范围提高了99.4%。VCO产生正弦波形,我们通过验证产生的波形和仿真结果来检查我们设计的正确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a Low Power Complementary Current Controlled Skewed Delay Voltage Controlled Oscillator using CNTFET
This paper presents a four staged voltage-controlled ring oscillator (VCO) operating in wide range of frequency that consumes low power, improves the performance and provides stability to the circuit. Due to the limitation of MOSFET that they cannot be scaled down after certain range due to some of its limitations such as high power and leakage current. To overcome the drawback, we used CNTFET technology that uses Carbon Nano Tubes in place of silicon. The VCO that is made in this paper using CNTFET operates in Terahertz frequency range varying from 0.331 THz to 0.091 THz and similarly the power dissipated ranges from 0.9565 to 0.2506 mW for control Voltage of 0 to 1 volts. The proposed VCO shows 97.7% improvement in power dissipation 99.4% increase in the frequency range in comparison to the VCOs based on CMOS technology. VCO produces a sinusoidal waveform and we checked the correctness of our design by verifying the waveform produced and simulated results.
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