S. Kılınç, Malik Ehsan Ejaz, S. Yarman, S. Ozoguz, S. Srivastava, Edmond Nurellari
{"title":"一种确定宽带上GaN射频功率晶体管功率输入/输出能力的数值方法","authors":"S. Kılınç, Malik Ehsan Ejaz, S. Yarman, S. Ozoguz, S. Srivastava, Edmond Nurellari","doi":"10.1109/mms55062.2022.9825519","DOIUrl":null,"url":null,"abstract":"In this paper, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to assess the gain-bandwidth limitations of the given source and load pull impedances for the 45W-GaN power transistor of Wolfspeed “CG2H40045” over 0.8-3.8 GHz bandwidth.","PeriodicalId":124088,"journal":{"name":"2022 Microwave Mediterranean Symposium (MMS)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Numerical Procedure to Determine the Power Intake/Delivery Capacity of a GaN RF Power Transistor over Broadband\",\"authors\":\"S. Kılınç, Malik Ehsan Ejaz, S. Yarman, S. Ozoguz, S. Srivastava, Edmond Nurellari\",\"doi\":\"10.1109/mms55062.2022.9825519\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to assess the gain-bandwidth limitations of the given source and load pull impedances for the 45W-GaN power transistor of Wolfspeed “CG2H40045” over 0.8-3.8 GHz bandwidth.\",\"PeriodicalId\":124088,\"journal\":{\"name\":\"2022 Microwave Mediterranean Symposium (MMS)\",\"volume\":\"153 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Microwave Mediterranean Symposium (MMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mms55062.2022.9825519\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Microwave Mediterranean Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mms55062.2022.9825519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Numerical Procedure to Determine the Power Intake/Delivery Capacity of a GaN RF Power Transistor over Broadband
In this paper, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to assess the gain-bandwidth limitations of the given source and load pull impedances for the 45W-GaN power transistor of Wolfspeed “CG2H40045” over 0.8-3.8 GHz bandwidth.
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